Strain-related phenomena in GaN epilayers under MeV inert-gas ions irradiation
Single crystal GaN epilayers were irradiated with heavy inert-gas ions (2.3-MeV Ne8+, 5.3-MeV Kr19+) to fluences ranging from 1.0×1011 to 1.0×1015 ions/cm2. The strain-related damage accumulation versus ion fluences was studied by using a high-resolution X-ray diffractometer (HRXRD) and an ultraviol…